Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 50, Issue 2, Pages 414-425Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2014.2375824
Keywords
Body biasing; boost converter; charge pump; conversion efficiency; dc-dc converter; dead-time; energy harvesting; low voltage; threshold voltage; variation
Categories
Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [NRF-2013R1A2A1A03070988]
- Research Grant Council of the Hong Kong SAR, China [617010]
- National Research Foundation of Korea [2013R1A2A1A03070988] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A charge pump using 0.13-mu m CMOS process for low-voltage energy harvesting is presented. A low-power adaptive dead-time (AD) circuit is used which automatically optimizes the dead-time according to the input voltage. A negative charge pump is also utilized for high efficiency at low input voltages (V-IN). The AD circuit improves efficiency by 17% at V-IN of 0.2 V compared to the fixed dead time circuit as well as enables the charge pump to work at VIN down to 0.15 V. Dynamic body bias (DBB) and switch-conductance enhancement techniques are applied to a unit stage of the three-stage charge pump. The reverse current flowing through the cross-coupled NMOS switches is prevented and the current transfer is also maximized. Together with the AD circuit and the DBB technique, the maximum output current was improved by 240% as compared to the conventional charge pump design using only the forward body bias.
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