Journal
2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012)
Volume -, Issue -, Pages 165-+Publisher
IEEE
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- ARC
- AISRF
- ANFF
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Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/mu m to -120MPa/mu m, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.
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