Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 21, Issue 6, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2015.2432022
Keywords
Semiconductor growth; quantum well lasers; optical device fabrication
Categories
Funding
- Singapore's National Research Foundation through the Competitive Research Program [NRF-CRP6-2010-4]
Ask authors/readers for more resources
We demonstrate a top-top contact, dry etched mirror facet III-V waveguide laser diode grown on germanium-on-insulator (GeOI). A 3 x InGaAs/GaAs quantum well designed to lase at 985 nm was grown on a GaAs buffer, which was lattice matched to the GeOI platform in order to realize the monolithic integration of III-V electronic and photonic devices with silicon and SiO2. Lasing occurred at similar to 985 nm with a threshold current density of similar to 2 kA/cm(2). Pulsed measurements, and SEM and TEM characterization methods were used. The issue of heat transfer limited the performance of the laser.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
