4.7 Review

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

Journal

REPORTS ON PROGRESS IN PHYSICS
Volume 81, Issue 5, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1361-6633/aaa978

Keywords

zinc oxide; quantum Hall effect; correlated electrons

Funding

  1. JST CREST, Japan [JPMJCR16F1]

Ask authors/readers for more resources

This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the MgxZn1-xO/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (mu > 1000 000 cm(2) Vs(-1)) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available