Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 6, Pages 567-569Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2420665
Keywords
RRAM; ReRAM; resistive switching; HfO2; low temperature; conduction mechanism; hopping; variation
Categories
Funding
- National Science Foundation through the Division of Computing and Communication Foundations [1449653]
- Direct For Computer & Info Scie & Enginr
- Division of Computing and Communication Foundations [1449653] Funding Source: National Science Foundation
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This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfOx/TiN resistive random access memory devices. For the first time, Pt/HfOx/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.
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