4.6 Article

Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 9, Pages 975-977

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2457243

Keywords

Phase-change materials; non-von Neumann; arithmetic computing; neuromorphic computing

Funding

  1. EPSRC [EP/J018783/1]
  2. Engineering and Physical Sciences Research Council [EP/J00541X/2, EP/L01730X/1, EP/J00541X/1, EP/J018694/1, EP/M015130/1, EP/J018783/1] Funding Source: researchfish
  3. EPSRC [EP/J018694/1, EP/L01730X/1, EP/J00541X/1, EP/J00541X/2, EP/J018783/1, EP/M015130/1] Funding Source: UKRI

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Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.

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