Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 4, Pages 327-329Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2407193
Keywords
High electron mobility transistor (HEMT); high frequency; terahertz monolithic integrated circuit (TMIC); 25 nm gate; indium phosphide (InP)
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Funding
- U.S. Defense Advanced Research Projects Agency (DARPA) THz Electronics Program
- U.S. Army Research Laboratory, Adelph, MD, USA, through the DARPA [HR0011-09-C-0062]
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We report the first ever terahertz monolithic integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process demonstrating amplification at 1 THz (1000 GHz) with 9-dB measured gain at 1 THz. This milestone was achieved with a 25-nm InP HEMT transistor, which exhibits 3.5-dB maximum available gain at 1 and 1.5 THz projected f(MAX).
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