Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 7, Pages 681-683Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2430332
Keywords
Selector device; cross-point memory array; threshold switching; PMC; spontaneous rupture
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Funding
- POSTECH-Samsung Electronics ReRAM Cluster Research
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In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO2-based threshold selector device showed high selectivity (similar to 10(7)) and steep slope (<5 mV/decade). The observed threshold switching in programmable metallization cell device occurred due to the spontaneous rupturing of silver (Ag) filament. The Ag ionization to minimize the steric repulsion between Ag and surrounding TiO2 electrolyte was the main origin of the spontaneous rupture.
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