Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 12, Pages 1321-1324Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2496303
Keywords
Galvanic effect; RRAM; Ag-Au electrode
Categories
Funding
- Ministry of Science and Technology, Taiwan [NSC-2221-E-110-025-MY3, MOST 103-2120-M-110-004]
Ask authors/readers for more resources
We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive switching memory. Because of the different chemical activities between Au and Ag metals, the Ag element in the Au-Ag electrode will drift into silicon oxide easily to achieve the resistive switching properties during device operation. In this letter, we found that the forming voltage of the device will be reduced, and the switching speed will be improved due to the galvanic effect. We demonstrate the galvanic effect of Au-Ag electrode by two different metal composition ratios through the material and electrical analyses.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available