Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory

We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive switching memory. Because of the different chemical activities between Au and Ag metals, the Ag element in the Au-Ag electrode will drift into silicon oxide easily to achieve the resistive switching properties during device operation. In this letter, we found that the forming voltage of the device will be reduced, and the switching speed will be improved due to the galvanic effect. We demonstrate the galvanic effect of Au-Ag electrode by two different metal composition ratios through the material and electrical analyses.