Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 4, Pages 357-359Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2407578
Keywords
Amorphous indium gallium zinc oxide (a-IGZO); thin-film transistors (TFTs); back channel anodization (BCA); low temperature
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Funding
- Shenzhen Municipal Scientific Program [JCYJ201208170028532]
- National Science Foundation of China [61274084]
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A back channel anodization (BCA) process for fabrication of amorphous indium gallium zinc oxide thin-flim transistors (a-IGZO TFTs) is proposed and demonstrated for the first time. In the BCA process, a localized anodic oxidization (anodization) is successfully implemented to convert the metal layer on back channel into insulator for channel passivation, with the metal layer on source/drain regions intact. As a result, source/drain electrodes and the back channel passivation layer are formed simultaneously in the process step of the BCA. The characterization results show that the fabricated a-IGZO TFTs utilizing BCA process have comparable electrical performances and superior gate-bias stress stability to the conventional a-IGZO TFTs with source/drain electrodes patterned by liftoff.
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