Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 4, Pages 372-374Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2404137
Keywords
Aluminum-doped zinc oxide (AZO); LEDs; transparent conductive layer (TCL); ultra-low forward voltage (V-f)
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Funding
- National Natural Science Foundation of China [61204091]
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In this letter, InGaN/GaN multiquantum well LEDs were fabricated with aluminum-doped zinc oxide (AZO) transparent conductive layer (TCL) grown by metal organic chemical vapor deposition (MOCVD) on n(+)-InGaN contact layer. Ultralow forward voltage (V-f) of 2.86 V at 20 mA was obtained, attributing to the epitaxial-like excellent interface between AZO/n(+)-InGaN contact layer confirmed by high-resolution transmission electron microscopy. The most worthy is that the V-f uniformity can be demonstrated on a 2-in wafer with a standard deviation of 0.02 V. Combined with the excellent light extraction, the MOCVD grown AZO-TCL is expected to be an alternative of tin-doped indium oxide in GaN-based LEDs for mass production.
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