Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 10, Pages 1076-1078Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2465850
Keywords
Permittivity; atomistic modeling; oxide interface; density-functional tight binding; silicon-on-insulator
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Funding
- University Grant Council of Hong Kong [AoE/P-04/08]
- National Natural Science Foundation of China [21273186]
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We establish the dependence of the permittivity of oxidized ultra-thin silicon films on the film thickness by means of atomistic simulations within the density-functional-based tight-binding (DFTB) theory. This is of utmost importance for modeling ultra-thin and extremely thin silicon-on-insulator MOSFETs, and for evaluating their scaling potential. We demonstrate that electronic contribution to the dielectric response naturally emerges from the DFTB Hamiltonian when coupled to Poisson equation solved in vacuum, without phenomenological parameters, and obtain good agreement with the available experimental data. Comparison with calculations of H-passivated Si films reveals much weaker dependence of permittivity on film thickness for the SiO2-passivated Si, with less than 18% reduction in the case of 0.9-nm silicon-on-insulator.
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