Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 8, Pages 814-816Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2442678
Keywords
Dielectrophoresis; nanowires; Schottky photodiodes; ultraviolet photodetectors; ZnO
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Funding
- Banco Santander-Universidad Autonoma de Madrid Cooperation Program through the Universidad Autonoma de Madrid,Madrid,Spain
- University of Alabama, Tuscaloosa, AL, USA
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This letter presents the characterization results of nanowire ( NW) Schottky photodiodes fabricated from the dielectrophoretic contact between a ZnO NW and a Cu electrode. The device counter-electrode is fabricated using Pt focused ion beam deposition. The current-voltage characteristics exhibit rectifying properties with a leakage current as low as 40 pA at -40 V. The fitting of the forward characteristics reveals a barrier height lowering under UV illumination along with a large reduction of the series resistance. At forward bias, responsivities of similar to 10(5) A/W are obtained above the bandgap energy. Under reverse bias, the responsivity reduces up to 10(4) A/W, but a higher ultraviolet/visible contrast and a faster response are observed. In those conditions, the barrier height lowering is fostered by the drift of photogenerated holes toward the interface with the yielding lower barrier height values under illumination.
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