4.6 Article

Highly Sensitive Pressure Sensor Array With Photothermally Reduced Graphene Oxide

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 2, Pages 180-182

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2385701

Keywords

Piezoresistive; reduced graphene; laser scribing

Funding

  1. CRD - Natural Sciences and Engineering Research Council of Canada [436725]

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We report a highly sensitive pressure sensor array fabricated with photothermally reduced graphene oxide (GO). Nonconductive GO thin film is converted into conductive (10(4) S/m) thin layer by fast and precisely designed laser scribing method to generate pressure sensors with sensitivity of 19 mV/kPa. The fabricated array is easily attachable on any surface for monitoring applied forces or pressure and maintains excellent electrical conductivity under high mechanical stress and thus holds promise for durable sensors.

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