Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal-Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma

In this letter, thin-film transistors (TFTs) were demonstrated with In2O3 channel layer prepared by metal-organic chemical vapor deposition (MOCVD). Treated by O-2 microwave plasma on the In2O3 channel, high performance was obtained such as ultra-high field-effect mobility of 243 cm(2)/Vs, ON/OFF current ratio of 10(7), and high stability under negative bias illumination stress, although no typical electrical characteristics were observed for TFTs without O-2 microwave plasma treatment. The effects of O-2 microwave plasma treatment were investigated by Hall effect measurements, X-ray photoelectron spectroscopy, and Kelvin probe force microscopy. The results indicated that the O-2 microwave plasma treatment leads to the oxygen ions adsorption onto the In2O3 surface and the consequent depletion of In2O3 channel. The MOCVD-grown In2O3 TFTs with ultra-high field-effect mobility are potentially applied in the next-generation system on panel.