Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 115, Issue 31, Pages 7879-7883Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1806998115
Keywords
electrometry; silicon carbide; defects; photoluminescence; charge conversion
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Funding
- Army Research Laboratory Office of the Secretary of Defense Quantum Science and Engineering Program
- NSF [EFRI 1641099, DMR-1420709, ECCS-1542205]
- University of Chicago/Advanced Institute for Materials Research Joint Research Center
- US Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division at Argonne National Laboratory
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Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high-frequency (megahertz to gigahertz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high-frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of 41 +/- 8 (V/cm)(2)/root Hz. Finally, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.
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