Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 31, Issue 1, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4767124
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Funding
- Oregon Nanoscience and Microtechnologies Institute
- Office of Naval Research [200CAR262]
- National Science Foundation [DMR-0805372]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0805372] Funding Source: National Science Foundation
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The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching ratios >10(4) and long retention times of >10(4) s. Electrical characterization of the devices suggests that both filamentary and interfacial mechanisms are important for device switching. The authors have used secondary ion mass spectrometry to characterize the devices and found that significant interfacial reactions occur at the Al/ZTO interface. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4767124]
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