Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 12, Pages 1295-1298Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2491339
Keywords
Resonant tunnelling diode; terahertz; manufacturability
Categories
Funding
- EPSRC
- EPSRC [EP/K503812/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K503812/1] Funding Source: researchfish
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We report on a dual-pass high current density resonant tunneling diode (RTD) for terahertz wave applications. This technique reduces the overall fabrication complexity and improves the reproducibility for creating low resistance ohmic contacts. With our dual-pass technique, we demonstrate accurate control over the final device area by measuring the RTD current-voltage characteristic during the fabrication process and guiding the emitter current through the full RTD structure with a second contact electrode on the collector side. We go on to show how we may extract important information about the RTD performance using this method.
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