1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R-ON,R-SP (5.12 m Omega.cm(2)), a low turn-ON voltage (<0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-mu m anode/cathode distance, resulting in a power figure-of-merit BV2/R-ON,R-SP of 727 MW . cm(-2). The record high BV of 1.9 kV is attributed to the dual field-plate structure.