Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes

We demonstrate a two-dimensional (2D) multilayered molybdenum disulfide (MoS2) transistor with molybdenum (Mo) side and edge contacts, which is deposited using a dc-sputtering method. It exhibits field-effect mobility of 23.9 cm(2)/Vs and ON/OFF ratio of 10(6) in a linear region. A current-voltage study under different temperatures (300-393 K) reveals that the Mo-MoS2 transistor shows a band transport characteristics, and a Schottky barrier height of 0.14 eV is estimated using a thermionic emission theory. Finally, the side and edge contacts of Mo-MoS2 are confirmed through the transmission electron microscope analysis. Our results not only show that Mo can be an alternative contact metal to other low work-function metals but also that the edge contact may play an important role in resolving the performance degradation over thickness increase of the MoS2 channel layer.