Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 4, Pages 294-296Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2402517
Keywords
Ferroelectric; subthreshold swing; negative capacitance
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Funding
- National Science Council of Taiwan [102-2221-E-003-030-MY3, 103-2221-E-003-023, 103-2622-E-002-031]
- National Nano Device Laboratories
- National Center for High-Performance Computing, Taiwan
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The antiferroelectricity in HfZrO2 (HZO) annealed at 600 degrees C with an abrupt turn ON of FET characteristics with SSmin = 23 mV/dec and SSavg = 50 mV/dec over 4 decades of I-DS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.
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