Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 8, Pages 781-783Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2442271
Keywords
Indium-gallium-zinc-oxide (IGZO); flexible electronics; polydimethylsiloxane (PDMS); thin-film transistors (TFTs); wavy electronics
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In this letter, a photolithographic fabrication process is used to manufacture indium-gallium-zinc-oxide thin-film transistors (TFTs) with mobilities >10 cm(2)/Vs directly on a 80 mu m thick polydimethylsiloxane (PDMS) substrate. Once the fabrication is completed, the PDMS is detached from a silicon wafer used as carrier substrate. Due to the thermal mismatch between silicon and PDMS, the release results in a reduction of the PDMS area by 7.2%, which leads to the formation of out-of-plane wrinkles on the TFT surface. The reflattening of the wrinkles under tensile strain enables device functionality, while the TFTs are bent up to 2.3% strain. Mechanical stability of the TFTs with our wrinkled approach is shown by electrically characterizing them at bending radii down to 6 mm.
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