Journal
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY
Volume 52, Issue -, Pages 84-93Publisher
ELSEVIER SCIENCE INC
DOI: 10.1016/j.precisioneng.2017.11.012
Keywords
Single crystal silicon carbide; SiC ingot; SiC wafer; Slicing; Electrical discharge machining; Foil tool electrode
Categories
Funding
- Japan Society for the Promotion of Science [15H06138]
Ask authors/readers for more resources
Recently, a multi-wire electrical discharge slicing (EDS) process has been proposed for slicing SiC ingots into wafers. A significant reduction in kerf loss is expected with this method compared with the conventional multi wire saw method. However, this process entails a high risk of wire breakage. Therefore, in the present study, a novel electrical discharge slicing process utilizing a running ultra-thin foil tool electrode is demonstrated for the slicing of SiC ingots. Relative to multi-wire EDS, the risk of tool breakage can be reduced with this new technique by increasing the tool cross-sectional area. A 25-mm (1-inch) SiC ingot was successfully sliced with the proposed method and a kerf loss of about 100 pm was achieved by utilizing a foil tool electrode with a thickness of 50 pm. This paper summarizes the specific characteristics and results of this process, including the machining stability, machining strategy, selection of foil tool material and multiple simultaneous slicing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available