4.8 Article

Excitonic Instability and Pseudogap Formation in Nodal Line Semimetal ZrSiS

Journal

PHYSICAL REVIEW LETTERS
Volume 120, Issue 21, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.120.216401

Keywords

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Funding

  1. Russian Science Foundation [17-72-20041]
  2. NWO
  3. ERC [338957 FEMTO/NANO]
  4. Cluster of Excellence The Hamburg Centre for Ultrafast Imaging (CUI) of the German Science Foundation (DFG)
  5. Stichting voor Fundamenteel Onderzoek der Materie (FOM)
  6. Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO)

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Electron correlation effects are studied in ZrSiS using a combination of first-principles and model approaches. We show that basic electronic properties of ZrSiS can be described within a two-dimensional lattice model of two nested square lattices. A high degree of electron-hole symmetry characteristic for ZrSiS is one of the key features of this model. Having determined model parameters from first-principles calculations, we then explicitly take electron-electron interactions into account and show that, at moderately low temperatures, ZrSiS exhibits excitonic instability, leading to the formation of a pseudogap in the electronic spectrum. The results can be understood in terms of Coulomb-interaction-assisted pairing of electrons and holes reminiscent of that of an excitonic insulator. Our finding allows us to provide a physical interpretation of the unusual mass enhancement of charge carriers in ZrSiS recently observed experimentally.

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