Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 20, Issue 8, Pages 5771-5779Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7cp07887k
Keywords
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Funding
- National Natural Science Foundation of China [21372067]
- basic research project of the basic research business of the provincial higher school in Heilongjiang province [RCCX201702]
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Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles. When applying a negative bias on the top electrode, the fabricated devices with a simple sandwich structure of indium tin oxide (ITO)/composite polymer/aluminum (Al) exhibited three distinct resistance states, which could be labeled as OFF'', ON1'' and ON2'' for ternary data storage application. The ITO/polystyrene (PS) + ZnO/Al devices can endure 3 x 10(4) read-cycles and exhibit a retention time of 10(4) s. The resistance-temperature dependence at different resistance states was investigated to confirm the temperature-dependent properties. The resistance of the OFF'' and ON1'' state reveals negative temperature dependence, manifesting a typical semiconductor characteristic. The resistance of the ON2'' state exhibits positive temperature dependence, showing metallic properties.
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