β-Ga2O3/p-Type 4H-SiC Heterojunction Diodes and Applications to Deep-UV Photodiodes

Here, pn heterojunction diodes based on beta-Ga2O3/p-type 4H-SiC structures are fabricated. The current-voltage characteristics of the diodes are measured in the temperature range from 23 to 500 degrees C. These diodes exhibit good rectification properties and stability under high temperatures. The rectification ratios exceed 1000 even at 500 degrees C. Deep-ultraviolet (deep-UV) photodiodes are fabricated on the basis of heterojunctions having various beta-Ga2O3 thicknesses, which present the maximum responsivity at 250-260 nm and respond to UV pulses as short as approximate to 30 mu s in real time.