Related references
Note: Only part of the references are listed.Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors
Xiaoliang Zhou et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Effect of Active Layer Thickness on Device Performance of Tungsten-Doped InZnO Thin-Film Transistor
Hyun-Woo Park et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
The stability of tin silicon oxide thin-film transistors with different annealing temperatures
Jianwen Yang et al.
EPL (2016)
Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination
Zhao Yang et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Capping Ti-Doped GaZnO on InGaZnO Layer As the Composite-Channel Structure for Enhancing the Device Performances and Stability of Thin-Film Transistors
Wei-Sheng Liu et al.
JOURNAL OF DISPLAY TECHNOLOGY (2016)
Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications
Josephine Socratous et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
High-mobility thin film transistors with neodymium-substituted indium oxide active layer
Zhenguo Lin et al.
APPLIED PHYSICS LETTERS (2015)
Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors
Takio Kizu et al.
JOURNAL OF APPLIED PHYSICS (2015)
Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250°C
Md Delwar Hossain Chowdhury et al.
APPLIED PHYSICS LETTERS (2014)
Thin Film Transistors: All-Solution-Processed Transparent Thin Film Transistor and Its Application to Liquid Crystals Driving (Adv. Mater. 23/2013)
Kwang-Ho Lee et al.
ADVANCED MATERIALS (2013)
Oxygen Dispersive Diffusion Induced Bias Stress Instability in Thin Active Layer Amorphous In-Ga-Zn-O Thin-Film Transistors
Jaewook Jeong et al.
APPLIED PHYSICS EXPRESS (2013)
Transparent Al-In-Zn-O Oxide semiconducting films with various in composition for thin-film transistor applications
Jun Yong Bak et al.
CERAMICS INTERNATIONAL (2013)
Influence of Tungsten Doping on the Performance of Indium-Zinc-Oxide Thin-Film Transistors
Honglei Li et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
E. Fortunato et al.
ADVANCED MATERIALS (2012)
Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination
Xiaoming Huang et al.
APPLIED PHYSICS LETTERS (2012)
Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
Kenji Nomura et al.
APPLIED PHYSICS LETTERS (2011)
Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
Kwang Hwan Ji et al.
APPLIED PHYSICS LETTERS (2011)
Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 °C
Eugene Chong et al.
APPLIED PHYSICS LETTERS (2010)
Flexible a-IZO thin film transistors fabricated by solution processes
Hua-Chi Cheng et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2010)
All-Amorphous-Oxide Transparent, Flexible Thin-Film Transistors. Efficacy of Bilayer Gate Dielectrics
Jun Liu et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2010)
Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory
Toshio Kamiya et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Present status of amorphous In-Ga-Zn-O thin-film transistors
Toshio Kamiya et al.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2010)
Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
Chang-Jung Kim et al.
APPLIED PHYSICS LETTERS (2009)
Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model
Toshio Kamiya et al.
JOURNAL OF DISPLAY TECHNOLOGY (2009)
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
Jae Kyeong Jeong et al.
APPLIED PHYSICS LETTERS (2008)
Amorphous IZO-based transparent thin film transistors
David C. Paine et al.
THIN SOLID FILMS (2008)
Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer
M. S. Grover et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
Estimation of electronegativity values of elements in different valence states
Keyan Li et al.
JOURNAL OF PHYSICAL CHEMISTRY A (2006)
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta et al.
APPLIED PHYSICS LETTERS (2006)