The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

In this paper, the influence of annealing temperature on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2cm(2)V(-1)s(-1) at 300 degrees C, along with an on/off current ratio of 1.6x10(8). Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4V after being stressed for 1500s. This result can be ascribed to the decrease in electrons captured by the deep defects in a-IZWO TFTs.