Journal
OPTICS EXPRESS
Volume 21, Issue 10, Pages 12002-12013Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.21.012002
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Funding
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- CIAN ERC [EEC-0812072]
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We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding. 49/-44 dB with simulation results as low as. 65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap. (C) 2013 Optical Society of America
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