Journal
OPTICS EXPRESS
Volume 21, Issue 9, Pages 11132-11140Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.21.011132
Keywords
-
Categories
Funding
- Japan Science and Technology Agency, Core Research for Evolutional Science and Technology (JST-CREST) [24310101, 24106729]
- VLSI Design and Education Center (VDEC), The University of Tokyo
- Cadence Corporation
- Mentor Graphics Corporation
- Japanese Ministry of Economy, Trade and Industry
- Grants-in-Aid for Scientific Research [24106729, 24651163] Funding Source: KAKEN
Ask authors/readers for more resources
In this study, we demonstrate a polarization sensitive pixel for a complementary metal-oxide-semiconductor (CMOS) image sensor based on 65-nm standard CMOS technology. Using such a deep-submicron CMOS technology, it is possible to design fine metal patterns smaller than the wavelengths of visible light by using a metal wire layer. We designed and fabricated a metal wire grid polarizer on a 20 x 20 mu m(2) pixel for image sensor. An extinction ratio of 19.7 dB was observed at a wavelength 750 nm. (C) 2013 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
