Journal
OPTICS EXPRESS
Volume 21, Issue 9, Pages A558-A575Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.21.00A558
Keywords
-
Categories
Funding
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF) through the Nanometer Structure Consortium at Lund University (nmC@LU)
- EU program AMON-RA [214814]
- Nordic Innovation program NANORDSUN
- E.ON AG as part of the E.ON International Research Initiative
- National Basic Research Program of the Ministry of Science and Technology of China [2012CB932703, 2012CB932700]
Ask authors/readers for more resources
Vertical arrays of direct band gap III-V semiconductor nanowires (NWs) hold the prospect of cheap and efficient next-generation photovoltaics, and guidelines for successful light-management are needed. Here, we use InP NWs as a model system and find, through electrodynamic modeling, general design principles for efficient absorption of sun light in nanowire arrays by systematically varying the nanowire diameter, the nanowire length, and the array period. Most importantly, we discover the existence of specific band-gap dependent diameters, 170 nm and 410 nm for InP, for which the absorption of sun light in the array is optimal, irrespective of the nanowire length. At these diameters, the individual InP NWs of the array absorb light strongly for photon energies just above the band gap energy due to a diameter-tunable nanophotonic resonance, which shows up also for other semiconductor materials of the NWs. Furthermore, we find that for maximized absorption of sun light, the optimal period of the array increases with nanowire length, since this decreases the insertion reflection losses. (C) 2013 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available