Starch-based biopolymer electrolyte gated oxide synaptic transistors

Recently, there are increasing interests in eco-friendly electronics. In the present work, water degradable indium-tin-oxide synaptic transistor was proposed. Solution processed starch-based electrolyte acted as gate dielectric. The starch-based electrolyte exhibits extremely strong electrostatic modulation behavior with electric-double-layer (EDL) capacitance of similar to 1.6 mu F/cm(2). The synaptic transistor exhibits a high on/off ratio of similar to 1.9 x 10(7), a small subthreshold swing of similar to 99.7 mV/decade and a high field effect mobility of similar to 14.9 cm(2)/Vs, respectively. The oxide synaptic transistor exhibits high stabilities in synaptic responses. Both short-term and long-term synaptic plasticities were mimicked. The proposed oxide synaptic transistors have potential applications in green neuromorphic platforms.