High-performance CSA-PANI based organic phototransistor by elastomer gratings

A new and exciting pattern transfer method is presented to enhance the photoconductivity of Ag/CSA-PANI/PMMA/ITO, organic field effect transistor (OFET) by employing soft-lithography based grating over the channel region. The light is diffracted by the 265 nm gratings to enhance the UV (365 nm) activity of the channel material. The electrical characteristics of the grating-based OFET exhibited p-channel properties with the saturated hole mobility and the threshold voltage of similar to 9.5x10(-5) cm(2)/V-s and similar to-1.72 V respectively. The photo-generated charge carriers strongly influence the drain current in comparison to the dark condition. The External Quantum Efficiency of similar to 2.45x10(5) establishes the photo-multiplication as a dominant factor for enhancement of the drain current. Moreover, the fabricated grating based OFET exhibited high photo-sensitivity and photo-responsivity of similar to 1.16x10(2) and similar to 7.33x10(4) A/W, respectively. Thus, the proposed soft-lithography grating based Ag/CSA-PANI/PMMA/ITO, OFET is an exceptional candidate for phototransistor applications.