Journal
OPTIK
Volume 156, Issue -, Pages 728-737Publisher
ELSEVIER GMBH, URBAN & FISCHER VERLAG
DOI: 10.1016/j.ijleo.2017.12.021
Keywords
Indium tin oxide; Direct current sputtering; Electrical properties; Optical properties; Surface roughness
Categories
Funding
- New Energy and Industrial Technology Development Organization (NEDO), Japan
Ask authors/readers for more resources
Amorphous indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide content were prepared by direct current (DC) sputtering of ITO target in mixed argon oxygen atmosphere onto glass substrates preheated at 523 K. The films were subsequently heat-treated in air at different temperatures in the range of 523-923 K for 60min. The use of oxygen during deposition resulted in highly transparent (>80%) in visible and infrared ranges of spectra films. It has been found from the electrical measurements that as-deposited films under optimum sputtering conditions at working gas flow rate of Q(Ar)/Q(O-2)= 50 sccm/0.5 sccm showed minimum volume resistivity of about 694 mu Omega cm. As-deposited thin films obtained under the optimum condition showed amorphous structure. Improving of crystallisation has been observed with increasing heat treatment temperature. It has been found that DC sputtered films with decreasing amount of indium oxide have smooth surface in contrast to typical ITO (90 mass% indium oxide). (C) 2017 Elsevier GmbH. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available