4.6 Article

CMOS compatible metamaterial absorbers for hyperspectral medium wave infrared imaging and sensing applications

Journal

OPTICS EXPRESS
Volume 26, Issue 8, Pages 10408-10420

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.26.010408

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Funding

  1. Engineering and Physical Sciences Research Council of the United Kingdom [EP/J018678/1]
  2. EPSRC [EP/M01326X/1, EP/J018678/1, EP/R019665/1] Funding Source: UKRI

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We experimentally demonstrate a CMOS compatible medium wave infrared metal insulator-metal (MIM) metamaterial absorber structure where for a single dielectric spacer thickness at least 93% absorption is attained for 10 separate bands centred at 3.08, 3.30, 3.53. 3.78, 4.14, 4.40, 4.72, 4.94, 5.33, 5.60 mu m. Previous hyperspectral MIM metamaterial absorber designs required that the thickness of the dielectric spacer layer be adjusted in order to attain selective unity absorption across the band of interest thereby increasing complexity and cost. We show that the absorption characteristics of the hyperspectral metamaterial structures are polarization insensitive and invariant for oblique incident angles up to 25 making them suitable for practical implementation in an imaging system Finally, we also reveal that under TM illumination and at certain oblique incident angles there is an extremely narrowband Fano resonance (Q > 50) between the MIM absorber mode and the surface plasmon polariton mode that could have applications in hazardous/toxic gas identification and biosensing. Published by The Optical Society under the tennis of the Creative Commons Unbutton 4.0 License.

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