Journal
SILICON CARBIDE AND RELATED MATERIALS 2012
Volume 740-742, Issue -, Pages 295-300Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.740-742.295
Keywords
heteroepitaxial growths; surface morphology; polytypes; Monte Carlo simulations
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We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (411 and 6H) substrates finding that the growth on misoriented (4 degrees-10 degrees degree off) 611 substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths.
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