Improvement of interface state and channel mobility using 4H-SiC (0-33-8) face

In this paper, we characterized MOS devices fabricated on 4H-SiC (0-33-8) face. The interface state density (At) of SiO2/4H-SiC(0-33-8) was significantly low compared to that of SiO2/4H-SiC(0001). The field-effect channel mobility (mu(FE)) obtained from lateral MOSFET (LMOSFET) was 80 cm(2)/Vs, in spite of a high p-well concentration of 5x10(17) cm(-3) (implantation). The double implanted MOSFET (DMOSFET) fabricated on 4H-SiC(0-33-8) showed a specific on-resistance of 4.0 m Omega cm(2) with a blocking voltage of 890 V.