Journal
SILICON CARBIDE AND RELATED MATERIALS 2012
Volume 740-742, Issue -, Pages 43-47Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.740-742.43
Keywords
6H-SiC; PVT growth; defect formation
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The structural defects in the single 6H-SiC crystals grown by the PVT method have been studied by the scanning electron microscopy, Raman scattering and photoluminescence techniques. The formation mechanism of the defects, micropipes and parasitic polytypes 4H and 15R, observed in the single 6H-SiC crystal has been proposed.
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