On peculiarities of defect formation in 6H-SiC bulk single crystals grown by PVT method

The structural defects in the single 6H-SiC crystals grown by the PVT method have been studied by the scanning electron microscopy, Raman scattering and photoluminescence techniques. The formation mechanism of the defects, micropipes and parasitic polytypes 4H and 15R, observed in the single 6H-SiC crystal has been proposed.