Journal
SILICON CARBIDE AND RELATED MATERIALS 2012
Volume 740-742, Issue -, Pages 767-+Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.740-742.767
Keywords
ion implantation; Aluminum doping; 4H-SiC; Hall mobility; Hall carriers; ohmic contacts
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The p-type doping of high purity semi-insulating 4H-SiC by Al+ ion implantation and a conventional thermal annealing of 1950 degrees C/5 min has been studied for implanted Al concentration in the range of 1x10(19) - 8x10(20) cm(-3) and 0.36 mu m thickness of the implanted layer. Sheet resistance in the range of 1.6 x 10(4) to 8.9 x 10(2) Omega(square), corresponding to a resistivity in the range of 4.7 x 10(-1) to 2.7 x 10(-2) Omega cm for increasing Al concentration have been obtained. Hall carrier density and mobility data in the temperature range of 140 - 600 K feature the transition from a valence band to an intra-band conduction for increasing Al concentration. In addition, the specific contact resistance of Ti/Al contacts on the 5 x 10(19) cm(-3) Al implanted specimen features a thermionic field effect conduction with a specific contact resistance in the 10(-6) Omega cm(2) decade.
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