3.8 Proceedings Paper

X-ray diffraction and Raman spectroscopy study of strain in graphene films grown on 6H-SiC(0001) using propane-hydrogen-argon CVD

Journal

SILICON CARBIDE AND RELATED MATERIALS 2012
Volume 740-742, Issue -, Pages 117-+

Publisher

TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.740-742.117

Keywords

graphene; SiC; strain; CVD; propane; hydrogen

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We have grown graphene films on 6H-SiC(0001) using propane CVD and evidenced the strong impact of the hydrogen/argon mixture used as the carrier gas on the graphene/SiC interface and on the orientation of graphene layers. By studying a set of samples grown with different hydrogen/argon mixture using Raman spectroscopy and grazing incidence X-ray diffraction, we evidence the links between graphene/SiC interface and strain in graphene.

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