Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 31, Issue 3, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4794383
Keywords
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Funding
- MIRTHE (NSF-ERC) [EEC-0540832]
- NSF [ECCS-1028364, HRD-0833180]
- PSC-CUNY
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1028364] Funding Source: National Science Foundation
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The authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 mu m and 4.0 mu m have been obtained. (C) 2013 American Vacuum Society.
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