4.8 Article

Synthetic antiferromagnetic spintronics

Journal

NATURE PHYSICS
Volume 14, Issue 3, Pages 217-219

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/s41567-018-0050-y

Keywords

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Funding

  1. Stichting voor Fundamenteel Onderzoek der Materie (FOM)
  2. European Research Council (ERC)
  3. D-ITP consortium, a program of the Netherlands Organization for Scientific Research (NWO) - Dutch Ministry of Education, Culture and Science
  4. National Research Foundation of Korea (NRF) [NRF-2015M3D1A1070465, NRF-2017R1A2B2006119]
  5. EU FET Open RIA Grant [766566]
  6. National Research Foundation of Korea [2017R1A2B2006119, 2015M3D1A1070465] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Spintronic and nanomagnetic devices often derive their functionality from layers of different materials and the interfaces between them. We discuss the opportunities that arise from synthetic antiferromagnets consisting of two or more ferromagnetic layers that are separated by metallic spacers or tunnel barriers and have antiparallel magnetizations.

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