Journal
NATURE PHOTONICS
Volume 12, Issue 7, Pages 430-+Publisher
NATURE RESEARCH
DOI: 10.1038/s41566-018-0175-7
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Funding
- National Basic Research Program of China [2014CB921601]
- National Key Research and Development Program of China [2016YFA0301002, 2016YFA0300900]
- National Natural Science Foundation of China [91421108, 11622429, 11374065, 51522201]
- Science and Technology Commission of Shanghai Municipality [16JC1400401]
- Natural Sciences and Engineering Research Council of Canada
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, US Department of Energy [DE-AC03-76SF00098]
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Graphene with massless Dirac fermions can have exceptionally strong third-order optical nonlinearities. Yet reported values of nonlinear optical susceptibilities for third-harmonic generation (THG), four-wave mixing (FWM) and self-phase modulation vary over six orders of magnitude. Such variation likely arises from frequency-dependent resonance effects of different processes in graphene under different doping. Here, we report an experimental study of THG and FWM in graphene using gate tuning to adjust the doping level and vary the resonant condition. We find that THG and sum-frequency FWM are strongly enhanced in heavily doped graphene, while the difference-frequency FWM appears just the opposite. Difference-frequency FWM exhibited a novel divergence towards the degenerate case in undoped graphene, leading to a giant enhancement of the nonlinearity. The results are well supported by theory. Our full understanding of the diverse nonlinearity of graphene paves the way towards future design of graphene-based nonlinear optoelectronic devices.
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