Journal
NATURE NANOTECHNOLOGY
Volume 13, Issue 2, Pages 152-+Publisher
NATURE RESEARCH
DOI: 10.1038/s41565-017-0022-x
Keywords
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Funding
- Welch Foundation [F-1672]
- US National Science Foundation (NSF) [DMR-1306878, EFMA-1542747]
- Materials Research Science and Engineering Center [DMR-1720595]
- KAUST (Saudi Arabia)
- MOST, Academia Sinica (Taiwan)
- TCECM, Academia Sinica (Taiwan)
- AOARD (USA) [FA23861510001]
- National Natural Science Foundation of China [11774268]
- Yan Jici Talent Students Program
- NSF [DMR-1719875, DMR-1429155]
- Division Of Materials Research [1306878] Funding Source: National Science Foundation
- Emerging Frontiers & Multidisciplinary Activities [1542747] Funding Source: National Science Foundation
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Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p-n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2-MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2-MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moire pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2-MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.
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