Journal
NATURE MATERIALS
Volume 17, Issue 3, Pages 231-+Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41563-017-0002-4
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Funding
- National Science Foundation (NSF) under DMREF [DMR-1629270]
- AFOSR [FA9550-15-1-0334]
- AOARD [FA2386-15-1-4046]
- US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences [DE-FG02-06ER46327]
- NSF MRSEC [DMR-1420645]
- NSF [DMR 1305193]
- US DOE, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [NRF-2015M3D1A1070672]
- NRF - Korea government [NRF-2015R1A2A2A01007904]
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The discovery of a two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface(1) has resulted in the observation of many properties(2-5) not present in conventional semiconductor heterostructures, and so become a focal point for device applications(6-8). Its counterpart, the two-dimensional hole gas (2DHG), is expected to complement the 2DEG. However, although the 2DEG has been widely observed(9), the 2DHG has proved elusive. Herein we demonstrate a highly mobile 2DHG in epitaxially grown SrTiO3/LaAlO3/SrTiO3 heterostructures. Using electrical transport measurements and in-line electron holography, we provide direct evidence of a 2DHG that coexists with a 2DEG at complementary heterointerfaces in the same structure. First-principles calculations, coherent Bragg rod analysis and depth-resolved cathodoluminescence spectroscopy consistently support our finding that to eliminate ionic point defects is key to realizing a 2DHG. The coexistence of a 2DEG and a 2DHG in a single oxide heterostructure provides a platform for the exciting physics of confined electron-hole systems and for developing applications.
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