ASML's NXE platform performance and volume introduction

All six NXE:3100, 0.25 NA EUV exposure systems are in use at customer sites enabling device development and cycles of learning for early production work in all lithographic segments; Logic, DRAM, MPU, and FLASH memory. NXE EUV lithography has demonstrated imaging and overlay performance both at ASML and end-users that supports sub-27nm device work. Dedicated chuck overlay performance of <2nm has been shown on all six NXE: 3100 systems. The key remaining challenge is productivity, which translates to a cost-effective introduction of EUVL in high-volume manufacturing (HVM). High volume manufacturing of the devices and processes in development is expected to be done with the third generation EUV scanners - the NXE:3300B. The NXE: 3300B utilizes an NA of 0.33 and is positioned at a resolution of 22nm which can be extended to 18nm with off-axis illumination. The subsystem performance is improved to support these imaging resolutions and overall productivity enhancements are integrated into the NXE platform consistent with 125 wph. Since EUV reticles currently do not use a pellicle, special attention is given to reticle-added-defects performance in terms of system design and machine build including maintenance procedures. In this paper we will summarize key lithographic performance of the NXE: 3100 and the NXE: 3300B, the NXE platform improvements made from learning on NXE: 3100 and the Alpha Demo Tool, current status of EUV sources and development for the high-power sources needed for HVM. Finally, the possibilities for EUV roadmap extension will be reviewed.