Journal
NANOTECHNOLOGY
Volume 29, Issue 34, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aac9f5
Keywords
selector device; cross-point array; OTS selector
Funding
- POSTECH-Samsung Electronics Research Project
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In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to empty set30 nm based on C-Te. Our proposed selector device exhibits outstanding performance such as a high switching ratio (I-on/I-off > 10(5)), an extremely low off-current (similar to 1 nA), an extremely fast operating speed of <10 ns (transition time of <2 ns and delay time of <8 ns), high endurance (10(9)), and high thermal stability (>450 degrees C). The observed high thermal stability is caused by the relatively small atomic size of C, compared to Te, which can effectively suppress the segregation and crystallization of Te in the OTS film. Furthermore, to confirm the functionality of the selector in a crossbar array, we evaluated a 1S-1R device by integrating our OTS device with a ReRAM (resistive random access memory) device. The 1S-1R integrated device exhibits a successful suppression of leakage current at the half-selected cell and shows an excellent read-out margin (>2(12) word lines) in a fast read operation.
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