Journal
NANOTECHNOLOGY
Volume 29, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aaa4d6
Keywords
nanowires; photodetector; passivation; dark current; surface states
Funding
- National Natural Science Foundation of China [61474010, 61574022, 61504012, 61674021, 11674038, 61704011]
- Developing Project of Science and Technology of Jilin Province [20160519007JH, 20160101255JC, 20160204074GX, 20170520117JH]
Ask authors/readers for more resources
Nanowire photodetectors, which have the advantages of fast response and high photoelectric conversion efficiency, can be widely applied in various industries. However, the rich surface states result in large dark current and can hinder the development of high-performance nanowire photodetectors. In this paper, the influence and mechanism of sulfur surface passivation on the dark current of a single GaAs nanowire photodetector have been studied. The dark current is significantly reduced by about 30 times after surface passivation. We confirm that the origin of the reduction of dark current is the decrease in the surface state density. As a result, a single GaAs nanowire photodetector with low dark current of 7.18 x. 10(-2) pA and high detectivity of 9.04 x 10(12) cmHz(0.5)W(-1) has been achieved. A simple and convenient way to realize high-performance GaAs-based photodetectors has been proposed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available