Journal
NANOTECHNOLOGY
Volume 29, Issue 19, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aab168
Keywords
local surface plasmon; AlGaN multi-quantum wells; deep ultraviolet emission; Al/SiO2 composite structure
Funding
- Key Project of Chinese National Development Programs [2016YFB0400901, 2016YFB0400804]
- National Natural Science Foundation of China [61675079, 11574166, 61377034, 61774065, 61704062]
- Director Fund of WNLO
- China Postdoctoral Foundation [2016M602287]
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In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.
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