4.8 Article

Ultrafast interfacial energy transfer and interlayer excitons in the monolayer WS2/CsPbBr3 quantum dot heterostructure

Journal

NANOSCALE
Volume 10, Issue 4, Pages 1650-1659

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7nr05542k

Keywords

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Funding

  1. Scientific Researches Foundation of the National University of Defense Technology [zk16-03-59]
  2. Opening Foundation of State Key Laboratory of High Performance Computing [201601-01, 201601-03]

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The idea of fabricating artificial solids with band structures tailored to particular applications has long fascinated condensed matter physicists. Heterostructure (HS) construction is viewed as an effective and appealing approach to engineer novel electronic properties in two dimensional (2D) materials. Different from common 2D/2D heterojunctions where energy transfer is rarely observed, CsPbBr3 quantum dots (0D-QDs) interfaced with 2D materials have become attractive HSs for exploring the physics of charge transfer and energy transfer, due to their superior optical properties. In this paper, a new 0D/2D HS is proposed and experimentally studied, making it possible to investigate both light utilization and energy transfer. Specifically, this HS is constructed between monolayer WS2 and CsPbBr3 QDs, and exhibits a hybrid band alignment. The dynamics of energy transfer within the investigated 0D/2D HS is characterized by femtosecond transient absorption spectrum (TAS) measurements. The TAS results reveal that ultrafast energy transfer caused by optical excitation is observed from CsPbBr3 QDs to the WS2 layer, which can increase the exciton fluence within the WS2 layer up to 69% when compared with pristine ML WS2 under the same excitation fluence. Moreover, the formation and dynamics of interlayer excitons have also been investigated and confirmed in the HS, with a calculated recombination time of 36.6 ps. Finally, the overall phenomenological dynamical scenario for the 0D/2D HS is established within the 100 ps time region after excitation. The techniques introduced in this work can also be applied to versatile optoelectronic devices based on low dimensional materials.

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